sot-89-3l plastic-encapsulate mosfets CJA03N10 n-channel mosfet description the CJA03N10 uses advanced trench technol ogy and design to provide excellent r ds(on) with low gate charge .this device is suitable for use in a wide variety of applications. features z lead free product is acquired z special process technology for high esd capability z high density cell design for ultra low r ds(on) z good stability and uniformity with high e as z excellent package for good heat dissipation application z power switching application z hard switching and high frequency circuits z uninterruptible power supply maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current i d 3 a pulsed drain current (note 1) i dm 20 a power dissipation p d 0.5 w thermal resistance from junction to ambient (note 2) r ja 250 /w junction temperature t j 150 storage temperature t stg -55~+150 so t -89-3l 1. gate 2. drain 3. source 1 of 2 sales@zpsemi.com www.zpsemi.com CJA03N10
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 100 v zero gate voltage drain current i dss v ds =100v,v gs = 0v 1 a gate-body leakage current i gss v gs =20v, v ds = 0v 100 na gate threshold voltage (note 3) v gs(th) v ds =v gs , i d =250a 1 2 v drain-source on-resistance (note 3) r ds(on) v gs =10v, i d =5a 140 m ? forward transconductance (note 3) g fs v ds =5v, i d =2.9a 3 s diode forward voltage (note 3) v sd i s =3a, v gs = 0v 1.2 v dynamic characteristics (note 4) input capacitance c iss 690 pf output capacitance c oss 120 pf reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz 90 pf switching characteristics (note 4) turn-on delay time t d(on) 11 ns turn-on rise time t r 7.4 ns turn-off delay time t d(off) 35 ns turn-off fall time t f v gs =10v,v ds =30v, r gen =2.5 ? , i d =2a, r l =15 ? 9.1 ns total gate charge q g 15.5 nc gate-source charge q gs 3.2 nc gate-drain charge q gd v ds =30v,v gs =10v,i d =3a 4.7 nc notes : 1. repetitive rating : pulse width limited by junction temperature. 2. surface mounted on fr4 board , t 10s. 3. pulse test : pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to producting. 2 of 2 sales@zpsemi.com www.zpsemi.com CJA03N10
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